GaN-based RF Amplifiers with High Gain Levels

Description

GaN-based models feature very high gain levels from 43 to 60 dB across mostly broad frequency bands ranging from 30 MHz to 7.5 GHz. Saturated output power levels range from 10 watts to 100 watts with 20 to 35% Power Added Efficiency (PAE).

Gallium nitride (GaN) coaxial power amplifiers have emerged as the technology of choice in power amplifier designs and dissipates heat more effectively,

These rugged connectorized designs have the advantage of high output load impedance that offers easier impedance matching over wider bandwidths using lower loss components. Applications include commercial and military radar, jamming systems, medical imaging, communications and electronic warfare.

Specs

  • gain levels from 43 to 60 dB
  • frequency bands ranging from 30 MHz to 7.5 GHz
  • Saturated output power levels range from 10 watts to 100 watts with 20 to 35% Power Added Efficiency (PAE)
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