UltraFET Devices in MLP 3x3

Description

Expanding its broad portfolio of power switch solutions, Fairchild Semiconductor (NYSE: FCS) announces new 100V, 200V and 220V N-channel UltraFET devices available in ultra-compact (3mm x 3mm) molded leadless packages (MLP). These devices are ideal for primary-side switches in isolated DC/DC converter applications, such as work stations, telecom and networking equipment, where improving system efficiency and saving board space are mandatory design goals. Fairchild's 200V device, the FDMC2610, boasts the industry's lowest Miller charge (3.6nC vs. 4nC) and the lowest on-resistance (200mOhms vs. 240mOhms) when compared with similar 200V MLP 3x3 devices on the market. These characteristics result in a 27 percent better Figure of Merit (FOM) and translate into superior thermal and switching performance in DC/DC converter applications. The 200V device also offers best-in-class thermal resistance (Theta JC) compared with similarly packaged devices (3C/W vs. 25C/W), a heat-dissipating feature that ensures reliability even in demanding environments. "Fairchild now offers designers ultra-compact MLP 3x3 power switches with industry-leading performance," said Mike Speed, Fairchild's market development manager, communications. "We've combined the advantages of our PowerTrench® process and advanced packaging technology to enhance Fairchild's UltraFET portfolio. These products are especially tailored to meet demanding design challenges posed by today's DC/DC converter applications." In addition to offering superior thermal and switching performance over similarly packaged MLP devices on the market, Fairchild's UltraFET devices consume 50 percent less board space than SO-8-packaged devices typically used in DC/DC converter designs. This package-size reduction enables engineers to design smaller, higher-density DC/DC converters by reducing the MOSFET footprint area and enhancing package thermal capability. To complement this offering of three N-channel devices, Fairchild also introduces a 150V P-channel planar UltraFET device, which is also available in an MLP 3x3. This device option offers designers a complete solution for their active-clamp switch topologies requiring both N- and P-channel MOSFETs. These lead (Pb)-free devices meet or exceed the requirements of the joint IPC/JEDEC standard J-STD-020C and are compliant with European Union regulations now in effect.

Specs

• Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A • Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A • Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm • RoHS Compliant • DC - DC Conversion
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