5G Power Inductors for Smartphones (DFE21CCN Series)

Description

DFE21CCN series of power inductors developed for the 5G smartphone market are comprised of four inductance values, intended for use in DC/DC converter and power management circuitry. Offering performance enhancements when compared to conventional inductors, they provide a 20% increase in saturation current (Isat) and a 50% reduction in DC resistance (RDC) over their predecessors. The L-shaped electrodes enable higher density levels to raise operational efficiency and allow for the downsizing of system designs.

 

The DFE21CCNR24MEL has a 0.24 µH inductance value, with an RDC of 20 mOhm (Max) and an Isat of 6.5A (Max).

 

For the DFE21CCNR47MEL, the key values are 0.47 µH for inductance, 29 mOhm (Max) for RDC, and 4.8A (Max) for Isat.

 

The 1.0 µH-rated DFE21CCN1R0MEL and 2.2 µH-rated DFE21CCN2R2MEL have respective typical RDC figures of 60 and 138 mOhm, with Isat figures of 3.3 and 2.1A, respectively.

 

The DFE21CC product series is available in a 0805-in. size format.

Specs

(DFE21CCN)R33MEL1R0MEL2R2MELR24MELR47MEL
L Size2.0 ±0.2 mm
W Size1.2 ±0.2 mm
T size0.8 mm
Inductance0.33μH1μH2.2μH0.24μH0.47μH
Inductance Tolerance±20%
Rated Current (Itemp)4600mA2700mA1800mA5200mA4100mA
Rated Current (Isat)5400mA3300mA2100mA6500mA4800mA
Rdc (max.)0.023Ω0.06Ω0.138Ω0.02Ω0.029Ω
Soldering SupportReflow soldering
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