High Power RF Transistors


C- and S-Band GaN HEMT devices are designed to solve a number of long-standing issues for radar systems employing traditional traveling wave tube (TWT) amplifiers.

These RF transistors provide the highest power and efficiency in the industry in a small package, as well as enable the economical combination of transistors to achieve the multi-kilowatt power amplifiers required for defense, weather, and air traffic radar.


  • 350W C-Band: outperforms closest commercial GaN competitor by an estimated 3.5 times
  • 500W S-Band: achieves 45% better than commercial S-Band products
  • Pulsed saturated power performance typically greater than 400 watts

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