High Power RF Transistors
Description
C- and S-Band GaN HEMT devices are designed to solve a number of long-standing issues for radar systems employing traditional traveling wave tube (TWT) amplifiers.
These RF transistors provide the highest power and efficiency in the industry in a small package, as well as enable the economical combination of transistors to achieve the multi-kilowatt power amplifiers required for defense, weather, and air traffic radar.
Specs
- 350W C-Band: outperforms closest commercial GaN competitor by an estimated 3.5 times
- 500W S-Band: achieves 45% better than commercial S-Band products
- Pulsed saturated power performance typically greater than 400 watts