Model BID Insulated Gate Bipolar Transistor (IGBT) Discrete Solution
Description
Model BID Series Insulated Gate Bipolar Transistor (IGBT) Discrete Solution combines technology from a MOSFET gate and a bipolar transistor for high-voltage and high-current applications.
This device uses advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics which results in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, due to the thermally efficient TO-252, TO-247, and TO-247N packages, the devices can provide a lower thermal resistance Rth(j-c), making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.
Specs
- 600 V, 5 A, low Collector-Emitter Saturation Voltage (VCE(sat))
- Trench-Gate Field-Stop technology
- Optimized for conduction
- RoHS compliant
- Low switching loss (Model BIDW20N60T; Model BIDNW30N60H3)
- Fast switching (Model BIDNW30N60H3)
Applications:
- SMPS
- UPS
- PFC
- Stepper motors (Model BIDW20N60T)
- Induction heating (Model BIDW30N60T; Model BIDNW30N60H3)
- Inverters (Model BIDW50N65T)
| BIDD05N60T | BIDW20N60T | BIDW30N60T | BIDW50N65T | BIDNW30N60H3 | |
|---|---|---|---|---|---|
| Package | TO-252 | TO-247 | TO-247 | TO-247 | TO-247N |
| Feature | Medium speed | Medium speed | Medium speed | Medium speed | High speed |
| VCE | 600V | ||||
| IC @ T=100°C | 5 A | 20 A | 30 A | 50 A | 30 A |
| Typ. VCE(sat) @ Ic, Vge=15V | 1.5V | 1.7V | 1.65V | 1.65V | 1.65V |
| IF @ T=100°C | N/A | 20 A | 30 A | 50 A | 12 A |
| Operating Temp. | -67 to 302°F (-55 to +150°C) | ||||