The SiSS52DN MOSFET, offered in the 3.3 x 3.3 mm thermally enhanced PowerPAK 1212-8S package, is a 30V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. It features on-resistance of 0.95 mΩ at 10V, a 5% improvement over the previous-generation product. In addition, the device delivers on-resistance of 1.5 mΩ at 4.5V, while its 29.8 mΩ*nC on-resistance times gate charge at 4.5V is one of the lowest on the market.


Its FOM represents a 29% improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.


The SiSS52DN is ideal for low side switching for synchronous rectification, synchronous buck converters, DC/DC converters, switch tank topologies, OR-ring FETs, and load switches for power supplies in servers and telecom and RF equipment. By delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both.


The device is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free.



  • TrenchFET Gen V power MOSFET
  • Very low RDS x Qg figure-of-merit (FOM)
  • Enables higher power density with very low RDS(on) and thermally enhanced compact package
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