Step Recovery Diodes with Low Snap Time


Step recovery diodes (SRDs) utilize controlled grown junction epitaxial silicon combined with a silicon dioxide passivation to ensure greater stability and reliability. They offer low snap time through voltages ranging from 8 to 120 v dc. Capacitances at 6 v dc range from 0.2 to 3 pF.


SRDs are ideally suited for signal generation applications, including pulse generators and parametric amplifiers.



  • Wide Selection of Tightend Capacitance Ranges
  • Low Transition Times
  • High Effciencies
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