Transistor Suited for L-Band Avionics

Description

Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1.03 - 1.09 GHz and supplies a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

 

This 100% high power RF tested transistor for new designs has 17dB of gain and a drain efficiency of 75% at ELM Mode S pulse conditions: 48x (32us On, 18us Off), 6.4% duty cycle.

Specs

  • GaN on SiC HEMT Technology
  • 120W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing
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