Integra Technologies, a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, has published an application note on to...
Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50 Ohms and supplies 50W of peak...
Designed to solve various size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionic systems, the IGNP1011L2400 is a high power GaN...
Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1...
Describing the rationale for utilizing high voltage GaN HEMT technology in wideband radar and avionic systems, this paper explores the design advantages of...
Integra Technologies, a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, offers a white paper written by Integra’s...
This product guide is a clean and easy to use brochure detailing the extensive line of RF power devices, including RF Power Transistors for new and legacy...
The best solid-state, high power amplifiers (HPAs), especially those used in critical defense, aerospace, and weather-radar applications, start with the...
